BUK7107-40ATC,118 NXP Semiconductors, BUK7107-40ATC,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7107-40ATC,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7107-40ATC,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057269118; BUK7107-40ATC /T3; BUK7107-40ATC /T3

NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 5.
Fig 7.
R DSon
400
300
200
100
(A)
(mΩ)
I D
0
12
10
8
6
4
2
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
20
12
20
2
10
V GS (V) = 5.5
40
8.5
4
60
6
80
V GS (V) =
8
8
6.5
V DS (V)
100
7
8
10
03ni67
I D (A)
03ni65
7.5
5.5
4.5
6.5
6
7
4
Rev. 02 — 6 February 2009
10
120
Fig 6.
Fig 8.
R DSon
(m Ω )
1.5
0.5
a
2
1
0
of gate-source voltage; typical values
-60
factor as a function of junction temperature
Drain-source on-state resistance as a function
Normalized drain-source on-state resistance
8
7
6
5
4
N-channel TrenchPLUS standard level FET
5
0
BUK7107-40ATC
10
60
15
120
© NXP B.V. 2009. All rights reserved.
V GS (V)
T
j
03ne89
( ° C)
03ni66
180
20
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