IRLML5203GTRPBF International Rectifier, IRLML5203GTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLML5203GTRPBF
• Description: MOSFET P-CH 30V 3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML5203GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 98mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 165 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML5203GTRPBF; IRLML5203GTRPBFTR

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0.01
100
100
0.1
0.1
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
2.0
0.1
T = 150 C
TOP
BOTTOM
J
-V
-V
DS
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
3.0
GS
°
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
1
4.0
°
-2.70V
V
20µs PULSE WIDTH
5.0
20µs PULSE WIDTH
T = 25 C
DS
J
= -15V
10
°
6.0
7.0
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
3.0A
DS
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
-2.70V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-10V
3
100