IRLML5203GTRPBF International Rectifier, IRLML5203GTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML5203GTRPBF
• Description: MOSFET P-CH 30V 3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML5203GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 98mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 165 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML5203GTRPBF; IRLML5203GTRPBFTR

Fig 11. Typical On-Resistance Vs. Gate
6
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
Fig 13a. Basic Gate Charge Waveform
V
4.0
G
Q
-V GS, Gate -to -Source Voltage (V)
6.0
GS
Voltage
8.0
Charge
Q
Q
GD
G
10.0
I D = -3.0A
12.0
14.0
16.0
0.40
0.30
0.20
0.10
0.00
Fig 12. Typical On-Resistance Vs. Drain
Fig 13b. Gate Charge Test Circuit
0
12V
V
GS
V GS = -4.5V
Same Type as D.U.T.
Current Regulator
.2µF
4
-I D , Drain Current (A)
50KΩ
-3mA
Current Sampling Resistors
Current
.3µF
I
G
8
V GS = -10V
D.U.T.
www.irf.com
I
D
12
+
-
V
DS
16