IRLML5203GTRPBF International Rectifier, IRLML5203GTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML5203GTRPBF
• Description: MOSFET P-CH 30V 3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML5203GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 98mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 165 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML5203GTRPBF; IRLML5203GTRPBFTR

4
100
0.1
10
1
800
600
400
200
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Drain-to-Source Voltage
0.6
-V
SD
-V
DS
°
,Source-to-Drain Voltage (V)
0.8
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
C oss
C rss
C iss
=
=
=
=
J
1.0
0V,
C
C
C
gs
gd
ds
°
+ C
+ C
10
1.2
f = 1MHz
gd ,
gd
1.4
C
ds
V
GS
SHORTED
1.6
= 0 V
1.8
100
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0.1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I =
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
-3.0A
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
4
1
BY R
DS(on)
8
V
V
DS
DS
=-24V
=-15V
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10
12
10us
100us
1ms
10ms
100
16