SI3443DVTRPBF International Rectifier, SI3443DVTRPBF Datasheet - Page 3

• Manufacturer Part Number: SI3443DVTRPBF
• Description: MOSFET P-CH 20V 4.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI3443DVTRPBF

• Package / Case: Micro6™(TSOP-6)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 72 ns
• Gate Charge Qg: 11 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 33 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
1.5
0.1
TOP
BOTTOM
-V
-V
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
GS
2.0
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1
T = 25 C
J
-1.50V
2.5
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
T = 150 C
J
10
= -15V
3.0
°
°
3.5
100
Fig 2. Typical Output Characteristics
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-5.6A
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
-1.50V
Si3443DV
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-4.5V
3
100