SI3443DVTRPBF International Rectifier, SI3443DVTRPBF Datasheet - Page 7

• Manufacturer Part Number: SI3443DVTRPBF
• Description: MOSFET P-CH 20V 4.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI3443DVTRPBF

• Package / Case: Micro6™(TSOP-6)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 72 ns
• Gate Charge Qg: 11 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 33 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si3443DV
TSOP-6
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