SI3443DVTRPBF International Rectifier, SI3443DVTRPBF Datasheet - Page 5

• Manufacturer Part Number: SI3443DVTRPBF
• Description: MOSFET P-CH 20V 4.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI3443DVTRPBF

• Package / Case: Micro6™(TSOP-6)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 72 ns
• Gate Charge Qg: 11 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 33 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
80
60
40
20
0.1
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
50
Vs. Drain Current
J
1
J
75
DM
x Z
Si3443DV
1
thJA
P
2
100
DM
+ T
10
TOP
BOTTOM
A
t
1
t
125
2
-1.3A
-2.4A
-3.0A
°
I D
5
100
150