IRFL4105PBF International Rectifier, IRFL4105PBF Datasheet - Page 2

• Manufacturer Part Number: IRFL4105PBF
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 3.7 A
• Gate Charge, Total: 23 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 19 ns
• Time, Turn-on Delay: 7.1 ns
• Transconductance, Forward: 3.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFL4105PBF

IRFL4105PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
I
I
V
t
Q
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
DSS
GSS
S
SM
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
DD
G
= 25Ω, I
= 25V, starting T
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
= 3.7A. (See Figure 12)
J
= 25°C, L = 16mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
SD
2.0
3.8
–––
–––
–––
–––
–––
55
J
≤ 150°C
≤ 3.7A, di/dt ≤ 110A/µs, V
0.058 –––
–––
–––
––– 0.045
–––
–––
–––
–––
–––
660
230
–––
–––
120
––– -100
3.4
9.8
7.1
23
12
19
12
99
55
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
170
4.0
5.1
30
1.3
1.3
25
35
15
82
V/°C
nC
µA
nA
nC
ns
pF
ns
Ω
V
V
V
S
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
= 3.7A
= 3.7A
= 25°C, I
= 25°C, I
= 7.5Ω, See Fig. 10
= 6.0Ω
= 10V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 10V, See Fig. 6 and 13
= 28V
= 0V
= 25V
≤ V
= 0V, I
= 20V
= -20V
GS
(BR)DSS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 3.7A, V
= 3.7A
= 250µA
= 1.9A
= 3.7A
,
= 0V
= 0V, T
D
= 1mA
GS
J
www.irf.com
= 150°C
= 0V