IRFL4105PBF International Rectifier, IRFL4105PBF Datasheet - Page 5

• Manufacturer Part Number: IRFL4105PBF
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 3.7 A
• Gate Charge, Total: 23 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 19 ns
• Time, Turn-on Delay: 7.1 ns
• Transconductance, Forward: 3.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFL4105PBF

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1000
0.01
100
0.1
10
0.00001
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
1
10V
12V
V
V
D = 0.50
GS
G
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Same Type as D.U.T.
0.05
0.20
0.10
0.02
0.01
Current Regulator
.2µF
Q
(THERMAL RESPONSE)
GS
0.0001
SINGLE PULSE
50KΩ
3mA
Current Sampling Resistors
.3µF
Q
Charge
I
Q
G
GD
G
0.001
D.U.T.
I
D
+
-
V
t , Rectangular Pulse Duration (sec)
DS
1
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
1
DS
GS
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
10V
V
t
d(on)
GS
Notes:
1. Duty factor D = t / t
2. Peak T = P
V
10
DS
IRFL4105PBF
t
r
J
DM
D.U.T.
100
x Z
1
R
thJA
D
t
2
d(off)
P
DM
+ T
A
1000
t
t
f
1
t 2
+
-
V
DD
10000
5
A