IRFL4105PBF International Rectifier, IRFL4105PBF Datasheet - Page 4

• Manufacturer Part Number: IRFL4105PBF
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 3.7 A
• Gate Charge, Total: 23 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 19 ns
• Time, Turn-on Delay: 7.1 ns
• Transconductance, Forward: 3.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFL4105PBF

IRFL4105PbF
4
1200
1000
100
800
600
400
200
10
1
0
0.4
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
C
C
C
Drain-to-Source Voltage
V
V
iss
oss
rss
0.6
SD
DS
T = 150°C
J
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
Forward Voltage
GS
iss
rss
oss
0.8
= 0V,
= C
= C
= C
gs
ds
gd
+ C
+ C
T = 25°C
1.0
10
J
gd
gd
f = 1MHz
, C
1.2
ds
SHORTED
V
1.4
GS
= 0V
100
1.6
A
A
100
0.1
20
16
12
10
8
4
0
1
0.1
0
Fig 8. Maximum Safe Operating Area
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
A
J
= 3.7A
= 25°C
= 150°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
10
G
, Drain-to-Source Voltage (V)
1
V
V
BY R
DS
DS
20
= 24V
= 15V
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 9
10
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30
100µs
10ms
10µs
1ms
100
40
A
A