IRFL4105PBF International Rectifier, IRFL4105PBF Datasheet - Page 3

• Manufacturer Part Number: IRFL4105PBF
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 3.7 A
• Gate Charge, Total: 23 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 19 ns
• Time, Turn-on Delay: 7.1 ns
• Transconductance, Forward: 3.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFL4105PBF

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100
100
Fig 1. Typical Output Characteristics,
Fig 3. Typical Transfer Characteristics
10
10
1
1
0.1
4.0
TOP
BOTTOM 4.5V
V
V
4.5
DS
GS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
5.0
1
J
= 25
T = 25°C
J
o
5.5
4.5V
C
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
C
10
= 25V
6.0
T = 150°C
J
6.5
100
7.0
A
A
100
2.0
1.5
1.0
0.5
0.0
10
1
Fig 2. Typical Output Characteristics,
0.1
-60
TOP
BOTTOM 4.5V
I
D
Fig 4. Normalized On-Resistance
-40
= 3.7A
T , Junction Temperature (°C)
V
-20
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
IRFL4105PBF
, Drain-to-Source Voltage (V)
0
Vs. Temperature
T
1
J
20
= 150
40
60
o
4.5V
C
20µs PULSE WIDTH
T = 150°C
J
80
10
100 120 140 160
V
GS
= 10V
100
3
A
A