STD1NK60T4 STMicroelectronics, STD1NK60T4 Datasheet - Page 3
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STD1NK60T4
Manufacturer Part Number
STD1NK60T4
Description
MOSFET N-CH 600V 1A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STN1HNK60.pdf
(15 pages)
Specifications of STD1NK60T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
156pF @ 25V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
600V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Fall Time
25 ns
Rise Time
5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2483-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD1NK60T4
Manufacturer:
ST
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Symbol
I
V
SDM
g
t
t
I
I
C
SD
C
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
I
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
r
r
gs
gd
(1)
rr
rr
g
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
I
I
V
(see test circuit, Figure 22)
I
V
(see test circuit, Figure 22)
SD
SD
SD
V
V
V
R
(Resistive Load see, Figure
21)
V
V
(see, Figure 23)
DD
DD
DS
DS
DD
DD
GS
G
= 1.0 A, V
= 1.0 A, di/dt = 100 A/µs
= 1.0 A, di/dt = 100 A/µs
= 4.7
= 25V, T
= 25V, T
= 15 V
= 25V, f = 1 MHz, V
= 300 V, I
= 480V, I
= 10V, R
Test Conditions
Test Conditions
,
V
I
j
j
D
GS
GS
= 25°C
= 150°C
G
D
= 0.5 A
D
= 4.7
= 1 A,
= 0
= 0.5 A,
= 10 V
GS
= 0
Min.
Min.
Typ.
23.5
Typ.
156
140
240
229
377
3.8
6.5
1.1
3.7
3.3
3.3
19
25
1
5
7
Max.
Max.
1.6
10
1
4
Unit
Unit
nC
nC
nC
µC
µC
pF
pF
pF
ns
ns
ns
ns
ns
ns
3/15
S
A
A
V
A
A