IRF7433TRPBF International Rectifier, IRF7433TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7433TRPBF
• Description: MOSFET P-CH 12V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7433TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1877pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7433PBFTR; IRF7433TRPBF; IRF7433TRPBFTR

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IRF7433PbF
Source-Drain Ratings and Characteristics
Notes:
‚
Electrical Characteristics @ T
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
S
SM
I
I
d(on)
d(off)
rr
r
f
DSS
GSS
2
fs
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
DS(on)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1877 –––
–––
––– 0.007 –––
–––
–––
–––
-12
22
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
272
175
512
310
4.5
4.0
8.8
8.2
36
28
20
-1.2
-0.9
-1.0
–––
–––
100
–––
–––
–––
408
263
–––
–––
-36
-25
-2.5
54
42
24
30
46
13
12
V/°C Reference to 25°C, I
mΩ
nC
µA
nC
ns
ns
pF
nA
V
V
V
S
A
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -8.7A
= -1.0A
= 25°C, I
= 25°C, I
= 6Ω
= 6Ω ‚
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -8V
= 8V
= -6V
= -4.5V ‚
= -6V, V
= 0V
= -10V
GS
Conditions
, I
D
S
F
D
Conditions
GS
= -250µA
D
= -2.5A, V
= -2.5A
D
D
D
= -250µA
GS
GS
= -8.7A
= -8.7A ‚
= -7.4A ‚
= -6.3A ‚
= -4.5V
‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V
‚
S
D