IRF7433TRPBF International Rectifier, IRF7433TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7433TRPBF
• Description: MOSFET P-CH 12V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7433TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1877pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7433PBFTR; IRF7433TRPBF; IRF7433TRPBFTR

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1.0
0.8
0.6
0.4
0.2
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
50
75
I D = -250µA
100
125
150
300
200
100
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Typical Power Vs. Time
IRF7433PbF
Time (sec)
7