IRF7433TRPBF International Rectifier, IRF7433TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7433TRPBF
• Description: MOSFET P-CH 12V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7433TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1877pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7433PBFTR; IRF7433TRPBF; IRF7433TRPBFTR

IRF7433PbF
4
3200
2800
2400
2000
1600
1200
100
0.1
800
400
10
1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
J
Coss
Ciss
Crss
-V
-V DS , Drain-to-Source Voltage (V)
SD
0.4
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
10
0.8
f = 1 MHZ
T = 25 C
J
V
1.0
GS
°
= 0 V
1.2
100
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-8.7A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
DS
Q , Total Gate Charge (nC)
5
G
°
, Drain-to-Source Voltage (V)
1
10
BY R
DS(on)
V
V
15
DS
DS
www.irf.com
=-9.6V
=-6V
10
100us
1ms
10ms
20
100
25