IRF7433TRPBF International Rectifier, IRF7433TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7433TRPBF
• Description: MOSFET P-CH 12V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7433TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1877pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7433PBFTR; IRF7433TRPBF; IRF7433TRPBFTR

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9.0
7.5
6.0
4.5
3.0
1.5
0.0
100
0.1
10
0.00001
Fig 9. Maximum Drain Current Vs.
1
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
t , Rectangular Pulse Duration (sec)
°
1
0.01
150
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
0.1
GS
DS
R
V
t
V
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
V
≤ 0.1 %
≤ 1
t
r
1
J
IRF7433PbF
DM
x Z
D.U.T.
1
thJA
P
2
R
t
DM
d(off)
+ T
10
A
t
1
t
f
t
2
+
-
V
100
5