STD3NK60ZT4 STMicroelectronics, STD3NK60ZT4 Datasheet - Page 5

• Manufacturer Part Number: STD3NK60ZT4
• Description: MOSFET N-CH 600V 2.4A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 311pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 3.3ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4102-2

Gate Charge vs Gate-source Voltage
Transconductance
Transconductance
Normalized Gate Threshold Voltage vs Temp.
STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1
Capacitance Variations
Static Drain-source On Resistance
Normalized On Resistance vs Temperature
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