IRFU9120NPBF International Rectifier, IRFU9120NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFU9120NPBF
• Description: MOSFET P-CH 100V 6.6A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU9120NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.5 A
• Power Dissipation: 39 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU9120NPBF

800
600
400
200
100
0.1
10
0
1
0.2
1
C iss
C oss
C rss
-V
-V
DS
T = 150 C
SD
J
V
C
C
C
0.8
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
=
=
=
=
°
0V,
C
C
C
gs
gd
ds
+ C
+ C
1.4
10
f = 1MHz
gd ,
gd
C
T = 25 C
ds
J
2.0
SHORTED
V
GS
°
= 0 V
100
2.6
100
0.1
10
20
16
12
1
8
4
0
1
0
T
T
Single Pulse
I =
D
C
J
= 25 C
= 150 C
-V
-4.0 A
OPERATION IN THIS AREA LIMITED
DS
°
Q , Total Gate Charge (nC)
5
°
G
, Drain-to-Source Voltage (V)
10
10
BY R
V
V
V
DS(on)
DS
DS
DS
FOR TEST CIRCUIT
15
=-80V
=-50V
=-20V
SEE FIGURE
100
10us
100us
1ms
10ms
20
13
1000
25