IRFU9120NPBF International Rectifier, IRFU9120NPBF Datasheet - Page 7

• Manufacturer Part Number: IRFU9120NPBF
• Description: MOSFET P-CH 100V 6.6A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU9120NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.5 A
• Power Dissipation: 39 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU9120NPBF

Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-