IRFU9120NPBF International Rectifier, IRFU9120NPBF Datasheet - Page 6

• Manufacturer Part Number: IRFU9120NPBF
• Description: MOSFET P-CH 100V 6.6A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU9120NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.5 A
• Power Dissipation: 39 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU9120NPBF

V
I
AS
G
R
-20V
Q
G
V DS
GS
t p
I AS
D.U.T
t p
0.01 Ω
L
Q
Charge
Q
GD
G
DRIVER
V
(BR)DSS
15V
V DD
A
250
200
150
100
50
0
25
Starting T , Junction Temperature ( C)
12V
V
50
GS
Same Type as D.U.T.
Current Regulator
J
.2µF
75
50KΩ
-3mA
Current Sampling Resistors
.3µF
I
G
100
TOP
BOTTOM
D.U.T.
I
D
125
+
-
-1.7A
-2.5A
-3.9A
°
V
I D
DS
150