IRFU9120NPBF International Rectifier, IRFU9120NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFU9120NPBF
• Description: MOSFET P-CH 100V 6.6A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU9120NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.5 A
• Power Dissipation: 39 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU9120NPBF

8.0
6.0
4.0
2.0
0.0
0.01
0.1
10
0.00001
25
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.01
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
t
Notes:
d(on)
0.1
≤ 0.1 %
≤ 1
t
J
r
DM
x Z
1
thJC
P
2
DM
1
+ T
t
d(off)
C
t
1
t
2
t
f
+
-
10