IXTP6N50P IXYS, IXTP6N50P Datasheet - Page 3
![MOSFET N-CH 500V 6A TO-220](/photos/5/41/54169/328-to-220-3_sml.jpg)
IXTP6N50P
Manufacturer Part Number
IXTP6N50P
Description
MOSFET N-CH 500V 6A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTP6N50P.pdf
(5 pages)
Specifications of IXTP6N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5V @ 50µA
Gate Charge (qg) @ Vgs
14.6nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Forward Transconductance Gfs (max / Min)
5.5 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
6.0
Rds(on), Max, Tj=25°c, (?)
1.1
Ciss, Typ, (pf)
740
Qg, Typ, (nc)
14.6
Trr, Typ, (ns)
400
Pd, (w)
100
Rthjc, Max, (k/w)
1.25
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTP6N50P
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXTP6N50P
Manufacturer:
IXYS
Quantity:
18 000
© 2006 IXYS All rights reserved
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
3
2
1
0
0
0
V
GS
Fig. 3. Output Characte ris tics
1
2
2
Fig. 5. R
Fig. 1. Output Characte ris tics
= 10V
0.5 I
2
4
4
DS(on)
V
D25
I
V
D S
D
V
@ 125
D S
GS
- A mperes
3
6
6
@ 25
V
V alue vs . I
- V olts
GS =
Nor m alize d to
- V olts
= 10V
º
º
7V
10V
7V
8
8
C
C
4
6V
5V
6V
5V
D
T
10
10
J
5
= 125
T
J
= 25
12
12
º
6
C
º
C
14
14
7
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
14
12
10
8
6
4
2
0
7
6
5
4
3
2
1
0
2
1
-50
-50
Fig. 2. Exte nde d Output Characte ris tics
0
Fig. 4. R
V alue vs . Junction Te m pe ratur e
V
3
-25
-25
GS
Fig. 6. Dr ain Curr e nt vs . Cas e
= 10V
6
T
0
DS(on
0
T
C
J
9
- Degrees Centigrade
- Degrees Centigrade
Te m pe r ature
V
25
)
25
GS
Norm alize d to 0.5 I
12
@ 25
V
I
D
D S
= 6A
= 10V
15
50
50
8V
- V olts
º
C
IXTP 6N50P
18
IXTA 6N50P
5V
7V
6V
75
75
I
D
21
= 3A
100
100
24
D25
125
125
27
150
150
30