IRF7420TRPBF International Rectifier, IRF7420TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7420TRPBF
• Description: MOSFET P-CH 12V 11.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7420TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3529pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 11.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7420PBFTR; IRF7420TRPBF; IRF7420TRPBFTR

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100
0.1
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
0.01
100
1
0.1
10
0.5
1
0.1
T = 150 C
J
-V
GS
-V DS , Drain-to-Source Voltage (V)
1.0
, Gate-to-Source Voltage (V)
°
1
-1.0V
20µs PULSE WIDTH
Tj = 25°C
1.5
T = 25 C
J
V
20µs PULSE WIDTH
DS
10
°
= -10V
TOP
BOTTOM -1.0V
2.0
VGS
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-7.0V
100
2.5
100
0.1
10
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
I =
D
-11.5A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-1.0V
20µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM -1.0V
V
GS
°
VGS
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
=
-7.0V
-4.5V
100
3