IRF7420TRPBF International Rectifier, IRF7420TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7420TRPBF
• Description: MOSFET P-CH 12V 11.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7420TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3529pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 11.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7420PBFTR; IRF7420TRPBF; IRF7420TRPBFTR

6
0.025
0.020
0.015
0.010
0.005
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
0.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
4.0
I D = -11.5A
6.0
8.0
0.08
0.06
0.04
0.02
0
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
0.0
12V
V
GS
V GS = -1.8V
Same Type as D.U.T.
Current Regulator
10.0
.2µF
-ID , Drain Current ( A )
Drain Current
50KΩ
-3mA
Current Sampling Resistors
20.0
.3µF
I
G
V GS = -2.5V
30.0
V GS = -4.5V
D.U.T.
I
D
www.irf.com
40.0
+
-
V
DS
50.0