IRF7420TRPBF International Rectifier, IRF7420TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7420TRPBF
• Description: MOSFET P-CH 12V 11.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7420TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3529pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 11.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7420PBFTR; IRF7420TRPBF; IRF7420TRPBFTR

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5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
100
0.1
500
10
1
0
0.2
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Fig 5. Typical Capacitance Vs.
-V
Coss
Crss
Ciss
SD
0.4
-V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
°
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
0.6
= C gd
T = 25 C
J
10
0.8
f = 1 MHZ
°
V
1.0
GS
= 0 V
1.2
100
1000
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
-11.5A
Gate-to-Source Voltage
-V
DS
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
DS(on)
V
V
DS
DS
30
=-9.6V
=-6V
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10
100us
1ms
10ms
40
100
50