IRF7420TRPBF International Rectifier, IRF7420TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7420TRPBF
• Description: MOSFET P-CH 12V 11.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7420TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3529pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 11.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7420PBFTR; IRF7420TRPBF; IRF7420TRPBFTR

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1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
50
75
I D = -250µA
100
125
150
400
350
300
250
200
150
100
50
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Fig 16. Typical Power Vs. Time
Time (sec)
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