IXTA6N50P IXYS, IXTA6N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTA6N50P
Manufacturer Part Number
IXTA6N50P
Description
MOSFET N-CH 500V 6A D2-PAK
Specifications of IXTA6N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5V @ 50µA
Gate Charge (qg) @ Vgs
14.6nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Forward Transconductance Gfs (max / Min)
5.5 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
6.0
Rds(on), Max, Tj=25°c, (?)
1.1
Ciss, Typ, (pf)
740
Qg, Typ, (nc)
14.6
Trr, Typ, (ns)
400
Pd, (w)
100
Rthjc, Max, (k/w)
1.25
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
© 2006 IXYS All rights reserved
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
Continuous
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
D
= 250 µA
= 50µA
G
= 0.5 I
DS
= 18 Ω
= 0V
D25
(TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTA 6N50P
IXTP 6N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
500
500
250
100
150
300
260
15
20
10
6
6
4
3
±100
Max.
5.0
1.1
50
5
V/ns
mJ
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
Ω
g
g
TO-263 (IXTA)
TO-220 (IXTP)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G = Gate
S = Source
DSS
DS(on)
G
D
G
S
= 500 V
=
S
≤ ≤ ≤ ≤ ≤ 1.1 Ω Ω Ω Ω Ω
D = Drain
TAB = Drain
DS99447E(04/06)
6 A
(TAB)
(TAB)
Related parts for IXTA6N50P
IXTA6N50P Summary of contents
... ± GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 6N50P IXTP 6N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 250 ≤ DSS 100 -55 ... +150 150 -55 ... +150 300 260 1 ...
... V, -di/dt = 100 A/µ Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
... Fig. 3. Output Characte ris tics º @ 125 10V olts D S Fig Nor m alize d to DS(on) 0 alue D25 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved 2.6 2.4 2.2 2 1.8 6V 1.6 1.4 1 0.8 0.6 0 º 125 º T ...
... Fig. 9. Source Cur Sour ce -To-Dr ain V oltage º 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0.8 0.9 1 100 10 C iss C oss 1 C rss ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 0.001 0.01 Pulse Width - milliseconds IXTA 6N50P IXTP 6N50P 0 ...
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