IRF7490TRPBF International Rectifier, IRF7490TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7490TRPBF
• Description: MOSFET N-CH 100V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7490TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 3.2A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Diode Characteristics
IRF7490
Dynamic @ T
Avalanche Characteristics
Static @ T
R
I
E
I
V
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
DSS
AR
SM
GSS
d(on)
r
d(off)
f
S
rr
V
fs
AS
(BR)DSS
DS(on)
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy‚
Avalanche Current
Parameter
Parameter
Parameter
Parameter
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
8.0
–––
–––
–––
–––
–––
0.11
1720 –––
1650 –––
–––
–––
–––
–––
–––
––– -200
–––
220
130
250
–––
–––
–––
220
8.0
4.2
37
25
33
10
13
51
11
67
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
330
4.0
1.3
2.3
39
20
56
43
V/°C
m
nC
nC
µA
nA
ns
pF
ns
V
V
S
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
Reference to 25°C, I
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 3.2A
= 3.2A
= 25°C, I
= 25°C, I
= 9.1
= V
= 100V, V
= 80V, V
= 50V, I
= 50V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V,
= 100V
= 10V ƒ
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
Conditions
Conditions
= 3.2A, V
= 3.2A
= 250µA
= 3.2A
= 3.2A
GS
= 0V to 80V …
Max.
= 80V, ƒ = 1.0MHz
= 1.0V, ƒ = 1.0MHz
= 0V, T
3.2
91
= 0V
D
www.irf.com
= 1mA ƒ
GS
ƒ
J
= 125°C
G
= 0V ƒ
Units
mJ
A
D
S