IRF7490TRPBF International Rectifier, IRF7490TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7490TRPBF
• Description: MOSFET N-CH 100V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7490TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 3.2A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7490
100000
4
10000
100.0
1000
100
10.0
10
1.0
0.1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
V GS = 0V,
C iss
C rss
C oss
0.4
Forward Voltage
T J = 150°C
= C gs + C gd , C ds
= C ds + C gd
= C gd
Ciss
Coss
Crss
0.6
10
f = 1 MHZ
0.8
T J = 25°C
SHORTED
V GS = 0V
1.0
1.2
100
1000
100
0.1
10
1
20
16
12
8
4
0
1
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
0
I D = 3.2A
V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20
V DS = 80V
VDS= 50V
VDS= 20V
30
100
www.irf.com
40
1msec
10msec
100µsec
50
1000
60