IRF7490TRPBF International Rectifier, IRF7490TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7490TRPBF
• Description: MOSFET N-CH 100V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7490TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 3.2A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
10
1
6
5
4
3
2
1
0
1E-005
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.02
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
50
T C , Case Temperature (°C)
Ambient Temperature
0.0001
75
100
0.001
125
t 1 , Rectangular Pulse Duration (sec)
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
d(on)
t
r
1
t
IRF7490
d(off)
10
t
f
+
-
5
100