IRF7490TRPBF International Rectifier, IRF7490TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7490TRPBF
• Description: MOSFET N-CH 100V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7490TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 3.2A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100.00
0.001
10.00
Fig 3. Typical Transfer Characteristics
0.01
1.00
0.10
0.01
Fig 1. Typical Output Characteristics
100
0.1
10
1
0.1
3.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.0
1
T J = 150°C
T J = 25°C
V DS = 50V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
3.7V
10
5.0
100
6.0
100
2.5
2.0
1.5
1.0
0.5
0.1
Fig 2. Typical Output Characteristics
10
1
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
I D = 5.4A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
0
1
20
40
60
20µs PULSE WIDTH
Tj = 150°C
IRF7490
3.7V
80 100 120 140 160
10
3
100