STD25NF10LT4 STMicroelectronics, STD25NF10LT4 Datasheet - Page 3

• Manufacturer Part Number: STD25NF10LT4
• Description: MOSFET N-CH 100V 25A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STD25NF10LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 5V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 25 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3156-2

STD25NF10L
1
Electrical ratings
Table 1.
1. Current limited by package
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 2.
1. When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
Rthj-case
Rthj-pcb
Symbol
SD
dv/dt
E
V
I
DM
I
V
V
AS
T
T
P
D
DGR
≤ 25A, di/dt ≤ 300A/µs, V
I
T
DS
GS
stg
J
D
tot
(1)
j
(2)
(4)
(3)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery avalanche energy
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
= 12.5A V
DD
=V(
DD
Parameter
BR)DSS
= 50V
C
GS
= 25°C
, T
GS
= 20 kΩ)
j
≤ T
= 0)
JMAX
C
C
= 25°C
= 100°C
(1)
-55 to 175
Value
± 16
0.67
100
100
100
100
450
25
21
20
Electrical ratings
100
275
1.5
W/°C
V/ns
Unit
mJ
°C
W
V
V
A
A
V
A
°C/W
°C/W
°C
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