STD25NF10LT4 STMicroelectronics, STD25NF10LT4 Datasheet - Page 8

• Manufacturer Part Number: STD25NF10LT4
• Description: MOSFET N-CH 100V 25A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STD25NF10LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 5V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 25 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3156-2

Test circuit
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Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 14. Gate charge test circuit
Figure 16. Unclamped Inductive load test
Figure 18. Switching time waveform
circuit
STD25NF10L