STF2HNK60Z STMicroelectronics, STF2HNK60Z Datasheet - Page 5

• Manufacturer Part Number: STF2HNK60Z
• Description: MOSFET N-CH 600V 2A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STF2HNK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 4.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current
(pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Switching times
Source drain diode
Parameter
Parameter
I
I
V
I
V
V
R
(see Figure 17)
V
R
(see Figure 17)
SD
SD
SD
DD
DD
DD
DD
G
G
=2.0A, V
=2.0A, di/dt = 100A/µs,
=2.0A, di/dt = 100A/µs,
=4.7
=4.7
=20 V, Tj=25°C
=20 V, Tj=150°C
=300V, I
=300V, I
Test Condictions
Test Condictions
V
V
GS
GS
GS
D
D
=1.0A,
=1.0A,
=0
=10V
=10V
Electrical characteristics
Min.
Min.
Typ.
Typ.
178
445
200
500
10
30
23
50
5
5
Max.
Max.
2.0
8.0
1.3
Unit
Unit
ns
ns
ns
ns
nC
nC
ns
ns
A
A
V
A
A
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