IXTY3N60P IXYS, IXTY3N60P Datasheet - Page 4
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IXTY3N60P
Manufacturer Part Number
IXTY3N60P
Description
MOSFET N-CH 600V 3A D-PAK
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTY3N60P.pdf
(4 pages)
Specifications of IXTY3N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.9 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5.5V @ 50µA
Gate Charge (qg) @ Vgs
9.8nC @ 10V
Input Capacitance (ciss) @ Vds
411pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
3.0
Rds(on), Max, Tj=25°c, (?)
2.9
Ciss, Typ, (pf)
411
Qg, Typ, (nc)
9.8
Trr, Typ, (ns)
500
Pd, (w)
70
Rthjc, Max, (k/w)
1.8
Package Style
TO-252AA (D PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTY3N60P
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
1000
100
4.5
3.5
2.5
1.5
0.5
10
1
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0.4
0
4
f = 1MHz
5
4.5
0.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
T
T
J
J
5
= 125
0.6
15
V
V
=125
V
-40
G S
S D
25
D S
º
º
º
º
- Volts
- Volts
C
C
C
C
5.5
20
- Volts
0.7
25
6
C iss
C oss
C rss
0.8
30
T
J
= 25
6.5
35
0.9
º
C
40
7
10.0
5.5
4.5
3.5
2.5
1.5
0.5
1.0
0.1
10
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0.1
0
Fig. 13. Maxim um Transient Therm al
0
T
J
V
I
I
IXTA 3N60P IXTP 3N60P
D
G
= -40
0.5
DS
1
125
= 1.5A
= 10mA
25
Fig. 8. Transconductance
= 300V
º
º
º
C
2
C
C
Fig. 10. Gate Charge
Pulse Width - milliseconds
1
1
Q
3
Resistance
G
1.5
I
- nanoCoulombs
D
4
- Amperes
10
2
5
6
IXTY 3N60P
2.5
7
100
3
8
3.5
9
1000
10
4