STP36NF06FP STMicroelectronics, STP36NF06FP Datasheet

MOSFET N-CH 60V 18A TO-220FP

STP36NF06FP

Manufacturer Part Number
STP36NF06FP
Description
MOSFET N-CH 60V 18A TO-220FP
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP36NF06FP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP36NF06FP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP36NF06FP
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
remarkable manufacturing reproducibility.
APPLICATIONS
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
(*) Current Limited by Package
October 2003
STP36NF06
STP36NF06FP
STP36NF06
STP36NF06FP
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SWITCHING SPEED
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
DM
V
V
P
AS (2)
T
DGR
I
I
T
stg
DS
GS
TYPE
D
D
tot
critical
(
j
SALES TYPE
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
alignment
(on) = 0.032
N-CHANNEL 60V - 0.032
V
60 V
60 V
DSS
Parameter
steps
<0.040
<0.040
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
STP36NF06FP
therefore
STP36NF06
MARKING
= 0)
C
C
18 A
30 A
= 25°C
= 100°C
I
D
(*)
a
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
STP36NF06
SD
0.47
120
30
21
70
36A, di/dt 400A/µs, V
PACKAGE
TO-220FP
- 30A TO-220/TO-220FP
TO-220
j
TO-220
= 25
-55 to 175
o
Value
C, I
± 20
200
60
60
20
1
D
STP36NF06FP
= 18 A, V
2
3
STP36NF06FP
DD
STP36NF06
18
0.17
DD
12
72
25
V
(BR)DSS
(*)
= 45V
PACKAGING
TO-220FP
, T
TUBE
TUBE
j
T
JMAX
1
2
W/°C
V/ns
Unit
mJ
°C
W
3
V
V
V
A
A
A
1/9

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STP36NF06FP Summary of contents

Page 1

... INTERNAL SCHEMATIC DIAGRAM MARKING STP36NF06 STP36NF06FP STP36NF06 = 25° 100° 120 = 25° 0.47 (1) I 36A, di/dt 400A/µ (2) Starting T STP36NF06 STP36NF06FP - 30A TO-220/TO-220FP TO-220 TO-220FP PACKAGE PACKAGING TO-220 TUBE TO-220FP TUBE Value STP36NF06FP 60 60 ± (*) 0.17 20 200 -55 to 175 (BR)DSS 45V Unit W/°C ...

Page 2

... STP36NF06 STP36NF06FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l (1.6 mm from case, for 10 sec) ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current ( Gate-body Leakage I GSS ...

Page 3

... SD (*) V Forward On Voltage t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM (*) Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area for TO-220 STP36NF06 STP36NF06FP Test Conditions Min 4 (Resistive Load, Figure 3) V ...

Page 4

... STP36NF06 STP36NF06FP Thermal Impedance Output Characteristics Transconductance 4/9 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP36NF06 STP36NF06FP Capacitance Variations Normalized on Resistance vs Temperature Normalized Breakdown Voltage Temperature 5/9 ...

Page 6

... STP36NF06 STP36NF06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø ¯ STP36NF06 STP36NF06FP MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 30.6 1.126 10.6 0.385 16.4 0.626 9 ...

Page 8

... STP36NF06 STP36NF06FP DIM. MIN. A 4.4 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4. 2.65 L6 15.25 L7 6.20 L9 3.50 DIA 3.75 8/9 TO-220 MECHANICAL DATA mm. TYP. MAX. MIN. 4.6 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 ...

Page 9

... All other names are the property of their respective owners. Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES www.st.com STP36NF06 STP36NF06FP 9/9 ...

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