IRF7410TRPBF International Rectifier, IRF7410TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7410TRPBF
• Description: MOSFET P-CH 12V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7410TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 91nC @ 4.5V
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 16A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 900mV
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 91 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:

‚
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
rr
R
I
I
d(on)
d(off)
r
f
DSS
GSS
SD
2
GS(th)
fs
rr
(BR)DSS
iss
oss
rss
DS(on)
g
gs
gd
Pulse width ≤ 400µs; duty cycle ≤
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
–––
–––
–––
Min. Typ. Max. Units
-0.4
––– 0.006 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 8676 –––
––– 2344 –––
––– 1604 –––
-12
Surface mounted on 1 in square Cu board, t ≤ 10sec.
55
134
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
271
200
97
91
18
25
13
12
-1.2
201
-0.9
-1.0
145
–––
–––
100
–––
–––
–––
407
300
-25
13
20
18
2.5
65
7
9
V/°C
mΩ
µC
ns
µA
nC
ns
pF
V
nA
V
V
S
showing the
T
di/dt = -100A/µs ‚
MOSFET symbol
integral reverse
p-n junction diode.
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= 25°C, I
= -16A
= -1.0A
= 25°C, I
= 6Ω
= 6Ω ‚
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -9.6V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -8V
= 8V
= -4.5V ‚
= -6V, V
= 0V
GS
Conditions
, I
D
S
F
Conditions
D
GS
= -2.5A, V
= -250µA
D
= -2.5A
D
D
D
= -250µA
GS
GS
= -16A
= -16A ‚
= -13.6A ‚
= -11.5A ‚
= -4.5V
= 0V, T
= 0V
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D
= -1mA
GS
J
G
= 0V ‚
= 70°C
D
S