IRF7410TRPBF International Rectifier, IRF7410TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7410TRPBF
• Description: MOSFET P-CH 12V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7410TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 91nC @ 4.5V
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 16A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 900mV
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 91 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
16
12
0.1
0.00001
10
8
4
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
t
Notes:
d(on)
≤ 0.1 %
t
≤ 1
1
r
J
DM
x Z
1
thJA
P
2
DM
+ T
t
10
d(off)
A
t
1
t
t
f
2
+
-
5
100