IRF7410TRPBF International Rectifier, IRF7410TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7410TRPBF
• Description: MOSFET P-CH 12V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7410TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 91nC @ 4.5V
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 16A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 900mV
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 91 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
14000
12000
10000
8000
6000
4000
2000
100
0.1
10
1
0.2
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
Coss
-V
Ciss
Crss
SD
T = 150 C
-V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
J
0.4
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
°
= C gd
0.6
T = 25 C
10
J
f = 1 MHZ
°
0.8
V
GS
= 0 V
1.0
100
1000
100
10
Fig 8. Maximum Safe Operating Area
6
5
4
3
2
1
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-16A
Gate-to-Source Voltage
-V
20
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
40
1
BY R
60
DS(on)
V
DS
=-9.6V
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80
10
100us
1ms
10ms
100
120
100