IRF7410TRPBF International Rectifier, IRF7410TRPBF Datasheet - Page 6

MOSFET P-CH 12V 16A 8-SOIC

IRF7410TRPBF

Manufacturer Part Number
IRF7410TRPBF
Description
MOSFET P-CH 12V 16A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7410TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
91nC @ 4.5V
Vgs(th) (max) @ Id
900mV @ 250µA
Current - Continuous Drain (id) @ 25° C
16A
Drain To Source Voltage (vdss)
12V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 16A, 4.5V
Transistor Polarity
P Channel
Continuous Drain Current Id
16A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
7mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
900mV
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
7 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 16 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
91 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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6
0.010
0.008
0.006
0.004
0.002
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
0.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
4.0
I D = -16A
6.0
8.0
0.015
0.005
0.02
0.01
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
0
12V
V
0.0
GS
Same Type as D.U.T.
Current Regulator
10.0 20.0 30.0 40.0 50.0 60.0 70.0
.2µF
Drain Current
50KΩ
-3mA
-ID , Drain Current ( A )
Current Sampling Resistors
.3µF
V GS = -1.8V
I
G
D.U.T.
V GS = -4.5V
I
D
www.irf.com
V GS = -2.5V
+
-
V
DS

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