IXFP5N50PM IXYS, IXFP5N50PM Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXFP5N50PM
Manufacturer Part Number
IXFP5N50PM
Description
MOSFET N-CH 500V 3.2A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFP5N50PM.pdf
(2 pages)
Specifications of IXFP5N50PM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
5.5V @ 500µA
Gate Charge (qg) @ Vgs
12.6nC @ 10V
Input Capacitance (ciss) @ Vds
620pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.2 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
3.2
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
620
Qg, Typ, (nc)
12.6
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
38
Rthjc, Max, (ºc/w)
3.3
Package Style
TO-220 Overmolded
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFP5N50PM
Manufacturer:
IXYS
Quantity:
18 000
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS MOSFETs and IGBTs are covered by 4,835,592
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
thJC
one or moreof the following U.S. patents:
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
V
1) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
F
DS
GS
GS
GS
GS
R
G
= I
= 5 A, -di/dt = 100 A/µs,
PRELIMINARY TECHNICAL INFORMATION
= 100 V, V
= 10 V; I
= 30 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V, Note 1
D
DS
DS
= 2.5 A, Note 1
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
= 0 V
4,850,072
4,881,106
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 2.5 A
= 5 A
(T
(T
J
J
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
= 25° C unless otherwise specified)
Min.
Min.
3.0
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Typ.
Typ.
12.6
0.15
620
4.7
6.3
4.3
5.0
72
28
28
65
26
6,162,665
6,259,123 B1
6,306,728 B1
1
3.3
Max.
Max.
200 ns
1.5
15
5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
ISOLATED TO-220 (IXTP...M)
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
1 2
IXFP 5N50PM
6,727,585
6,759,692
6,771,478 B2
3
2 - Drain (Collector)
3 - Source (Emitter)