STD5NK50Z-1 STMicroelectronics, STD5NK50Z-1 Datasheet - Page 3

• Manufacturer Part Number: STD5NK50Z-1
• Description: MOSFET N-CH 500V 4.4A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD5NK50Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.2A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.22ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
C
V
OSS eq
Symbol
Symbol
Symbol
I
V
V
R
SDM
(BR)DSS
g
oss eq.
t
t
I
I
C
SD
I
C
GS(th)
C
Q
d(on)
d(off)
Q
DS(on
fs
RRM
DSS
GSS
I
Q
Q
SD
t
oss
t
t
iss
rss
rr
gs
gd
r
f
(1)
g
rr
(1)
(2)
(3)
is defined as a constant equivalent capacitance giving the same charging time as C
.
Drain-source Breakdown
Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance V
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
= 0)
I
V
V
V
V
V
D
CASE
V
V
V
R
(see Figure 19)
V
V
(see Figure 22)
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
= 1 mA, V
G
I
I
V
(see Figure 20)
SD
SD
= Max Rating
= Max Rating, T
= V
= 4.7
= ± 20 V
= 10 V, I
DD
= 25 V, f = 1 MHz, V
= 15 V , I
= 0 V, V
= 250 V, I
= 400 V, I
= 10 V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.4 A, V
= 4.4 A, di/dt = 100 A/µs
Test Conditions
Test Conditions
GS
= 30V, T
Test Conditions
, I
GS
D
D
V
DS
= 50 µA
D
GS
= 2.2 A
D
D
= 0
= 2.2 A
= 0 to 400 V
j
= 2.2 A,
= 4.4 A,
GS
= 10 V
= 150°C
C
= 0
= 125°C
GS
= 0
Min.
Min.
Min.
500
oss
3
when V
DS
1425
Typ.
Typ.
Typ.
3.75
1.22
535
310
3.1
9.2
75
17
45
15
10
32
15
20
10
increases from 0 to 80% V
4
Max.
Max.
Max.
± 10
17.6
4.5
4.4
1.6
1.5
50
28
1
Unit
Unit
Unit
nC
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
3/17
V
V
S
A
A
V
A
DSS
.