STD3N62K3 STMicroelectronics, STD3N62K3 Datasheet - Page 12

• Manufacturer Part Number: STD3N62K3
• Description: MOSFET N-CH 620V 2.7A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 385pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8478-2

Package mechanical data
12/20
Dim
L20
L30
∅P
D1
H1
b1
e1
J1
L1
Q
A
D
E
F
b
c
e
L
STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
Doc ID 14894 Rev 2
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.044
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
Min
0.6
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62