STD30NF03LT4 STMicroelectronics, STD30NF03LT4 Datasheet - Page 3

• Manufacturer Part Number: STD30NF03LT4
• Description: MOSFET N-CH 30V 30A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD30NF03LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 830pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 2.5V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.02 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 240 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 205 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3157-2

STD30NF03L - STD30NF03L-1
1
Electrical ratings
Table 1.
1. Current limited by package
2. Pulse width limited by safe operating area.
3. Starting T
Table 2.
Rthj-amb
Rthj-sink
Rthj-pcb
Symbol
E
V
I
DM
I
V
V
AS
T
T
P
D
DGR
I
T
DS
GS
stg
J
D
tot
(1)
j
(2)
(3)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Thermal resistance case-sink max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
= 15A V
DD
= 15V
Parameter
C
GS
= 25°C
GS
= 20 kΩ)
= 0)
C
C
= 25°C
= 100°C
-65 to 175
Value
± 20
0.27
120
100
30
30
30
19
50
Electrical ratings
100
275
3.0
1.5
W/°C
Unit
mJ
°C
W
V
V
V
A
A
A
°C/W
°C/W
°C/W
°C
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