STU3N62K3 STMicroelectronics, STU3N62K3 Datasheet - Page 13

• Manufacturer Part Number: STU3N62K3
• Description: MOSFET N-CH 620V 2.7A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STU3N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 385pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 15.6 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 6.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
A
B
D
E
F
H
15.90
Min.
4.40
0.45
0.75
1.15
1.15
4.95
2.40
28.6
9.80
2.5
2.5
2.9
10
9
3
Dia
Doc ID 14894 Rev 2
TO-220FP mechanical data
mm.
Typ
16
10.40
10.60
16.40
Max.
4.60
2.75
0.70
1.00
1.50
1.50
5.20
2.70
30.6
9.30
2.7
3.6
3.2
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.114
0.626
0.354
0.118
Min.
Package mechanical data
0.630
inch
Typ.
7012510-I
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
Max.
13/20