STD3NK90ZT4 STMicroelectronics, STD3NK90ZT4 Datasheet

MOSFET N-CH 900V 3A DPAK

STD3NK90ZT4

Manufacturer Part Number
STD3NK90ZT4
Description
MOSFET N-CH 900V 3A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD3NK90ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
22.7nC @ 10V
Input Capacitance (ciss) @ Vds
590pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
1.5A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
4.1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
4.8 Ohms
Forward Transconductance Gfs (max / Min)
2.7 S
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Price
Part Number:
STD3NK90ZT4
Manufacturer:
ST
Quantity:
12 500
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Manufacturer:
ST
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Part Number:
STD3NK90ZT4
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Part Number:
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ST
Quantity:
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Company:
Part Number:
STD3NK90ZT4
Quantity:
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Company:
Part Number:
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Quantity:
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DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDERING INFORMATION
November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP3NK90Z
STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAK
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
STP3NK90ZFP
STD3NK90ZT4
STD3NK90Z-1
TYPE
SALES TYPE
STP3NK90Z
DS
(on) = 4.1
900 V
900 V
900 V
900 V
V
DSS
Zener-Protected SuperMESH™Power MOSFET
R
< 4.8
< 4.8
< 4.8
< 4.8
DS(on)
P3NK90ZFP
MARKING
P3NK90Z
D3NK90Z
D3NK90Z
3 A
3 A
3 A
3 A
I
D
STP3NK90Z - STP3NK90ZFP
STD3NK90Z - STD3NK90Z-1
90 W
25 W
90 W
90 W
Pw
PACKAGE
TO-220FP
TO-220
DPAK
IPAK
INTERNAL SCHEMATIC DIAGRAM
TO-220
DPAK
1
3
TAPE & REEL
PACKAGING
TUBE
TUBE
TUBE
TO-220FP
IPAK
1
1
2
2
1/13
3
3

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STD3NK90ZT4 Summary of contents

Page 1

... HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP3NK90Z STP3NK90ZFP STD3NK90ZT4 STD3NK90Z-1 November 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z ...

Page 2

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous ...

Page 3

ELECTRICAL CHARACTERISTICS (T ON/OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static Drain-source On DS(on) Resistance ...

Page 4

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 Safe Operating Area For TO-220/DPAK/IPAK Thermal Impedance For TO-220/DPAK/IPAK Output Characteristics 4/13 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/13 ...

Page 6

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 Fig. 2: Unclamped Inductive Waveform ...

Page 8

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 9

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. TYP A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 ...

Page 10

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 10/13 TO-252 (DPAK) ...

Page 11

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4.4 H ...

Page 12

STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 ...

Page 13

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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