STD3NM60T4 STMicroelectronics, STD3NM60T4 Datasheet

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... Tight process control and high manufacturing yields Applications ■ Switching Description Modems technology applies the benefits of the multiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure. The resulting product offers low on-resistance, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary ...

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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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STD3NM60, STD3NM60-1, STP4NM60 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source Voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current ...

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Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold ...

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STD3NM60, STD3NM60-1, STP4NM60 Table 7. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM ...

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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 4. Safe operating area for DPAK and IPAK Figure 6. Output characterisics 6/17 STD3NM60, STD3NM60-1, STP4NM60 Figure 3. Thermal impedance for TO-220 Figure 5. Thermal impedance ...

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STD3NM60, STD3NM60-1, STP4NM60 Figure 8. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 9. Static drain-source on resistance Figure 13. Normalized on resistance vs temperature Doc ID ...

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Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/17 STD3NM60, STD3NM60-1, STP4NM60 Doc ID 8370 Rev 4 ...

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STD3NM60, STD3NM60-1, STP4NM60 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times A A ...

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Test circuits Figure 21. Gate charge waveform Vds Vgs(th) Qgs1 Qgs2 Qgd 10/17 STD3NM60, STD3NM60-1, STP4NM60 Id Vgs Doc ID 8370 Rev 4 ...

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STD3NM60, STD3NM60-1, STP4NM60 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

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Package mechanical data Dim 12/17 TO-220 type A mechanical data Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

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STD3NM60, STD3NM60-1, STP4NM60 DIM TO-252 (DPAK) mechanical data mm. m ...

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Package mechanical data DIM (L1 14/17 STD3NM60, STD3NM60-1, STP4NM60 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 ...

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STD3NM60, STD3NM60-1, STP4NM60 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

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Revision history 6 Revision history Table 9. Document revision history Date 14-Jan-2004 02-Sep-2009 16/17 Revision 3 Inserted V value @ T DSS 4 Document reformatted to improve readability Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Changes = 150 °C ...

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... STD3NM60, STD3NM60-1, STP4NM60 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...