IXTA5N60P IXYS, IXTA5N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTA5N60P
Manufacturer Part Number
IXTA5N60P
Description
MOSFET N-CH 600V 5A D2-PAK
Specifications of IXTA5N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.7 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5.5V @ 50µA
Gate Charge (qg) @ Vgs
14.2nC @ 10V
Input Capacitance (ciss) @ Vds
750pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 Ohms
Forward Transconductance Gfs (max / Min)
5 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
5.0
Rds(on), Max, Tj=25°c, (?)
1.7
Ciss, Typ, (pf)
750
Qg, Typ, (nc)
14.2
Trr, Typ, (ns)
500
Pd, (w)
100
Rthjc, Max, (k/w)
1.25
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Transient
S
V
Continuous
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 50μA
G
= 0.5 I
DS
= 18 Ω
= 0 V
D25
(TO-220)
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTA 5N60P
IXTP 5N60P
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
600
600
360
100
150
300
260
10
20
10
5
5
4
3
±100
Max.
5.5
1.7
50
5
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-263 (IXTA)
TO-220 (IXTP)
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
DSS
DS(on)
G = Gate
S = Source
G
D
G
≤ ≤ ≤ ≤ ≤
= 600
=
S
S
1.7
D = Drain
TAB = Drain
5
DS99426E(04/06)
(TAB)
(TAB)
Ω Ω Ω Ω Ω
A
V
Related parts for IXTA5N60P
IXTA5N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 5N60P IXTP 5N60P Maximum Ratings 600 = 1 MΩ 600 GS ± 30 ± 360 ≤ DSS 100 -55 ... +150 150 -55 ... +150 300 260 1 ...
... A, -di/dt = 100 A/μ Pulse test, t ≤ 300 μs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
... olts D S Fig Nor m alize d to DS(on) 0 alue D25 2.8 2 10V GS 2.4 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved º 10V º C 2.6 2.4 2.2 1.8 1.6 6V 1.4 1.2 0.8 5V 0.6 0 5.5 5.0 4.5 4.0 º ...
... Fig. 9. Source Curr Sour ce -To-Dr ain V oltage º 125 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0.8 0.9 0 Fig. 12. M axim um Tr ans ie nt The 10.00 1.00 ...
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