IXTY4N60P IXYS, IXTY4N60P Datasheet - Page 4
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IXTY4N60P
Manufacturer Part Number
IXTY4N60P
Description
MOSFET N-CH TO-252
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTP4N60P.pdf
(5 pages)
Specifications of IXTY4N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5.5V @ 100µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
635pF @ 25V
Power - Max
89W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
4.0
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
635
Qg, Typ, (nc)
13
Trr, Typ, (ns)
500
Pd, (w)
89
Rthjc, Max, (k/w)
1.41
Package Style
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
5.4
4.8
4.2
3.6
2.4
1.8
1.2
0.6
14
12
10
10
6
3
0
8
6
4
2
0
1
0.4
4
0
f = 1MHz
4.5
5
0.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
T
Fig. 9. Source Current vs.
Source-To-Drain Voltage
J
10
=125
T
5
J
-40
25
= 125
0.6
º
º
º
V
V
C
15
C
C
V
G S
S D
5.5
D S
º
C
- Volts
- Volts
0.7
20
- Volts
6
25
0.8
C iss
C oss
C rss
6.5
30
T
J
0.9
= 25
7
35
º
C
7.5
40
1
10.00
1.00
0.10
0.01
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0.01
0
Fig. 13. Maxim um Transient Therm al
0
T
J
V
I
I
= -40
D
G
125
DS
25
= 2A
= 10mA
2
Fig. 8. Transconductance
1
º
º
= 300V
0.1
º
C
C
C
Fig. 10. Gate Charge
Pulse Width - milliseconds
IXTA4N60P IXTP4N60P
IXTU4N60P IXTY4N60P
Q
4
2
Resistance
G
I
- nanoCoulombs
D
1
- Amperes
6
3
8
4
10
10
5
100
12
6
1000
14
7