IXTA76N075T IXYS, IXTA76N075T Datasheet - Page 4

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IXTA76N075T

Manufacturer Part Number
IXTA76N075T
Description
MOSFET N-CH 75V 76A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA76N075T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
2580pF @ 25V
Power - Max
176W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
76 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
76
Rds(on), Max, Tj=25°c, (?)
0.0120
Ciss, Typ, (pf)
2580
Qg, Typ, (nc)
57
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
140
120
100
220
200
180
160
140
120
100
100
80
60
40
20
80
60
40
20
10
0
0
0.4
3
0
f = 1 MHz
3.5
5
Fig. 9. Forward Voltage Drop of
0.6
T
J
4
= 150ºC
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
0.8
Intrinsic Diode
15
V
V
V
GS
SD
DS
5
T
- Volts
- Volts
J
- Volts
= 25ºC
20
1
5.5
C iss
C oss
C rss
T
J
25
= -40ºC
150ºC
1.2
25ºC
6
30
6.5
1.4
35
7
1.6
7.5
40
1.00
0.10
0.01
80
70
60
50
40
30
20
10
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
5
D
G
DS
= 10A
= 10mA
0.0001
20
Fig. 12. Maximum Transient Thermal
= 38V
10
Fig. 8. Transconductance
15
T
J
40
= - 40ºC
Q
0.001
Pulse Width - Seconds
Fig. 10. Gate Charge
G
20
- NanoCoulombs
I
25ºC
D
150ºC
- Amperes
Impedance
25
60
0.01
30
80
35
IXTP76N075T
IXTA76N075T
0.1
40
100
45
1
50
120
55
10
140
60

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